JOPSS - Search Results

Search Results: Records 1-4 displayed on this page of 4

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Journal Articles

Relationship between donor activation and defect annealing in 6H-SiC hot-implanted with phosphrous ions

Oshima, Takeshi; Uedono, Akira*; Ito, Hisayoshi; Yoshikawa, Masahito; Kojima, Kazutoshi; Okada, Sohei; Nashiyama, Isamu; Abe, Koji*; Tanigawa, Shoichiro*; Frank, T.*; et al.

Materials Science Forum, 338-342, p.857 - 860, 2000/00

no abstracts in English

Journal Articles

Control of electrical properties of SiC using ion implantation technique

Ito, Hisayoshi; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; T.Troffer*; G.Pensl*

Ionics, 24, p.45 - 52, 1998/07

no abstracts in English

Journal Articles

Hot-implantation of phosphorus ions into 6H-SiC

Abe, Koji*; Oshima, Takeshi; Ito, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Iwami, Motohiro*

Mater. Sci. Forum, 264-268, p.721 - 724, 1998/00

no abstracts in English

Journal Articles

Defects in ion-implanted 3C-SiC probed by a monoenergetic positron beam

Uedono, Akira*; Ito, Hisayoshi; Oshima, Takeshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*; *; *; et al.

Japanese Journal of Applied Physics, Part 1, 35(12A), p.5986 - 5990, 1996/12

no abstracts in English